IPT015N10N5ATMA1 vs BSC072N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil IPT015N10N5ATMA1 dari Infineon dan BSC072N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPT015N10N5ATMA1 BSC072N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT015N10N5ATMA1 —
Technology OptiMOS™ 5 OptiMOS 5
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) Max 100 V 80 V
Continuous Drain Current (ID, Tc) 300 A —
On-Resistance RDS(on) Max 1.5 mΩ —
Power Dissipation (PD, Tc) 375 W —
Paket PG-HSOF-8-1 (TOLL) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Configuration Single —
Suhu Kerja -55°C to +175°C —
Gate Threshold VGS(th) [DATA_NEEDED: VGS(th) typical and min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] [DATA_NEEDED: typical Qg]
Output Capacitance (Coss) Reduced up to 44% vs prior generation (per manufacturer claim) —
RDS(on) Improvement vs Prior Generation Up to 43% reduction —
Status RoHS Compliant Compliant
Packaging Tape & Reel —
Part Family — BSC072N08NS5 (OptiMOS 5)
Continuous Drain Current (ID) at Tc — 74 A
Drain-Source On-Resistance (RDS(on)) Max — 7.2 mOhm at VGS=10V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Rentang Suhu Kerja — [DATA_NEEDED: full min/max operating Tj]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Level MSL — [DATA_NEEDED: MSL rating]
Shipping Pack — Tape & Reel (ATMA1)
Standard Pack Quantity — 5000

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