IPT015N10N5ATMA1 vs BSC072N08NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT015N10N5ATMA1 disebabkan oleh Infineon dan BSC072N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPT015N10N5ATMA1 BSC072N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT015N10N5ATMA1 —
Technology OptiMOS™ 5 OptiMOS 5
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) Max 100 V 80 V
Continuous Drain Current (ID, Tc) 300 A —
On-Resistance RDS(on) Max 1.5 mΩ —
Power Dissipation (PD, Tc) 375 W —
Kemasan PG-HSOF-8-1 (TOLL) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single —
Suhu Operasi -55°C to +175°C —
Gate Threshold VGS(th) [DATA_NEEDED: VGS(th) typical and min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] [DATA_NEEDED: typical Qg]
Output Capacitance (Coss) Reduced up to 44% vs prior generation (per manufacturer claim) —
RDS(on) Improvement vs Prior Generation Up to 43% reduction —
Status RoHS Compliant Compliant
Packaging Tape & Reel —
Part Family — BSC072N08NS5 (OptiMOS 5)
Continuous Drain Current (ID) at Tc — 74 A
Drain-Source On-Resistance (RDS(on)) Max — 7.2 mOhm at VGS=10V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Gambaran Suhu Operasi — [DATA_NEEDED: full min/max operating Tj]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Aras MSL — [DATA_NEEDED: MSL rating]
Shipping Pack — Tape & Reel (ATMA1)
Standard Pack Quantity — 5000

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