IPT015N10N5ATMA1 vs BSC072N08NS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPT015N10N5ATMA1 sa pamamagitan ng Infineon at BSC072N08NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPT015N10N5ATMA1 BSC072N08NS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT015N10N5ATMA1 —
Technology OptiMOS™ 5 OptiMOS 5
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) Max 100 V 80 V
Continuous Drain Current (ID, Tc) 300 A —
On-Resistance RDS(on) Max 1.5 mΩ —
Power Dissipation (PD, Tc) 375 W —
Packhaging PG-HSOF-8-1 (TOLL) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Single —
Temperature na Operasyon -55°C to +175°C —
Gate Threshold VGS(th) [DATA_NEEDED: VGS(th) typical and min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] [DATA_NEEDED: typical Qg]
Output Capacitance (Coss) Reduced up to 44% vs prior generation (per manufacturer claim) —
RDS(on) Improvement vs Prior Generation Up to 43% reduction —
Tindminan RoHS Compliant Compliant
Packaging Tape & Reel —
Part Family — BSC072N08NS5 (OptiMOS 5)
Continuous Drain Current (ID) at Tc — 74 A
Drain-Source On-Resistance (RDS(on)) Max — 7.2 mOhm at VGS=10V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Hanay ng Temperature na Operasyon — [DATA_NEEDED: full min/max operating Tj]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Level ng MSL — [DATA_NEEDED: MSL rating]
Shipping Pack — Tape & Reel (ATMA1)
Standard Pack Quantity — 5000

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