IPT015N10N5ATMA1 vs BSC072N08NS5ATMA1 比較
詳細並排比較 IPT015N10N5ATMA1 由 Infineon 與 BSC072N08NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 ✓ 啟用中
規格比較
| 參數 | IPT015N10N5ATMA1 | BSC072N08NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT015N10N5ATMA1 | — |
| Technology | OptiMOS™ 5 | OptiMOS 5 |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 100 V | 80 V |
| Continuous Drain Current (ID, Tc) | 300 A | — |
| On-Resistance RDS(on) Max | 1.5 mΩ | — |
| Power Dissipation (PD, Tc) | 375 W | — |
| 封裝 | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single | — |
| 工作溫度 | -55°C to +175°C | — |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | [DATA_NEEDED: typical Qg] |
| Output Capacitance (Coss) | Reduced up to 44% vs prior generation (per manufacturer claim) | — |
| RDS(on) Improvement vs Prior Generation | Up to 43% reduction | — |
| RoHS 狀態 | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Part Family | — | BSC072N08NS5 (OptiMOS 5) |
| Continuous Drain Current (ID) at Tc | — | 74 A |
| Drain-Source On-Resistance (RDS(on)) Max | — | 7.2 mOhm at VGS=10V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |
| 工作溫度範圍 | — | [DATA_NEEDED: full min/max operating Tj] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| Shipping Pack | — | Tape & Reel (ATMA1) |
| Standard Pack Quantity | — | 5000 |