IQDH35N03LM5SCATMA1 vs BSZ068N06NSATMA1 Perbandingan
Perbandingan bersamaan detil IQDH35N03LM5SCATMA1 dari Infineon dan BSZ068N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktifInfineon
BSZ068N06NSATMA1 - 60V, 6.8mΩ N-Channel OptiMOS 5 MOSFET | Infineon
BSZ068N06NSATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQDH35N03LM5SCATMA1 | BSZ068N06NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench, shielded-gate) | OptiMOS 5 (trench-gate) |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| Paket | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +175 C | -55 °C to +150 °C |
| Level MSL | 1 (unlimited) | MSL1 |
| Status RoHS | Compliant | — |
| Marking | IQDH35N03LM5S | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 40 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID at Ta] |
| On-Resistance RDS(on) max | — | 6.8 mΩ @ VGS=10 V |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 46 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typ] |
| RoHS / Halogen-Free | — | RoHS compliant, halogen-free |