IQDH35N03LM5SCATMA1 vs BSZ068N06NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH35N03LM5SCATMA1 disebabkan oleh Infineon dan BSZ068N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQDH35N03LM5SCATMA1 BSZ068N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 5 (trench, shielded-gate) OptiMOS 5 (trench-gate)
Drain-Source Voltage (VDS) max 30 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta 66 A —
Pulsed Drain Current (IDM) at Tc 700 A —
On-State Resistance (RDS(on)) max 0.35 mOhm @ VGS=10V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 278 W —
Kemasan PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C -55 °C to +150 °C
Aras MSL 1 (unlimited) MSL1
Status RoHS Compliant —
Marking IQDH35N03LM5S —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 40 A
Continuous Drain Current (ID, Ta) — [DATA_NEEDED: ID at Ta]
On-Resistance RDS(on) max — 6.8 mΩ @ VGS=10 V
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 46 W
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg typ]
RoHS / Halogen-Free — RoHS compliant, halogen-free

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