IQE220N15NM5ATMA1 vs ISC015N06NM5LF2ATMA1 Perbandingan
Perbandingan bersamaan detil IQE220N15NM5ATMA1 dari Infineon dan ISC015N06NM5LF2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE220N15NM5ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at Ta | 7 A | 32 A |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | 3 W |
| Power Dissipation (PD) at Tc | 100 W | 217 W |
| RDS(on) Max at VGS=10V | 22 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 µA) | 3 V |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | 90 nC |
| Input Capacitance (Ciss) | 14 pF | 6.9 nF |
| Output Capacitance (Coss) | 340 pF | 1.3 nF |
| Konfigurasi Output | Single N-Channel | — |
| Paket | PG-TSON-8-5 (Source-Down) | PG-TDSON-8 FL (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +150C (junction) | — |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 Linear FET 2 (N-Channel) |
| Status RoHS | Compliant | — |
| Level MSL | 1 | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Pulsed Drain Current (IDM) at Tc | — | 275 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.55 mΩ |
| On-Resistance RDS(on) at VGS=10V (typ) | — | 1.3 mΩ |
| Gate-Source Voltage Rating | — | ±20 V |
| Reverse Recovery Charge (Qrr) | — | 1.3 nC |
| Reverse Transfer Capacitance (Crss) | — | 55 pF |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| RoHS | — | Compliant |