IQE220N15NM5CGSCATMA1 vs IPTC039N15NM5ATMA1 Perbandingan
Perbandingan bersamaan detil IQE220N15NM5CGSCATMA1 dari Infineon dan IPTC039N15NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ AktifInfineon
IPTC039N15NM5ATMA1 - 150V 190A OptiMOS 5 N-Channel MOSFET | Infineon
IPTC039N15NM5ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE220N15NM5CGSCATMA1 | IPTC039N15NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current at Ta (ID) | 7 A | — |
| Continuous Drain Current at Tc (ID) | 44 A | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 100 W | — |
| On-Resistance (RDS(on)) | 22 milliohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | — |
| Paket | PG-WHTFN-9 (Source-Down) | PG-HDSOP-16-2 (top-side cooled) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | OptiMOS 5 trench |
| Rentang Suhu Kerja | -55C to +150C (junction) | — |
| Status RoHS | Compliant | Compliant |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| Continuous Drain Current (ID) at Tc | — | 190 A |
| Power Dissipation (PD) at Ta | — | 3.8 W |
| Power Dissipation (PD) at Tc | — | 319 W |
| On-Resistance RDS(on) typical | — | 3.9 mOhm |
| Gate Charge Qg typical | — | 74 nC |
| Maximum Gate-Source Voltage (VGS) | — | 20 V |
| Suhu Kerja | — | -55 C to +175 C (junction) |
| Cooling | — | Top-side cooled (case above PCB) |