IQE220N15NM5CGSCATMA1 vs IPTC039N15NM5ATMA1 比較
詳細並排比較 IQE220N15NM5CGSCATMA1 由 Infineon 與 IPTC039N15NM5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPTC039N15NM5ATMA1 - 150V 190A OptiMOS 5 N-Channel MOSFET | Infineon
IPTC039N15NM5ATMA1 ✓ 啟用中規格比較
| 參數 | IQE220N15NM5CGSCATMA1 | IPTC039N15NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current at Ta (ID) | 7 A | — |
| Continuous Drain Current at Tc (ID) | 44 A | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 100 W | — |
| On-Resistance (RDS(on)) | 22 milliohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | — |
| 封裝 | PG-WHTFN-9 (Source-Down) | PG-HDSOP-16-2 (top-side cooled) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | OptiMOS 5 trench |
| 工作溫度範圍 | -55C to +150C (junction) | — |
| RoHS 狀態 | Compliant | Compliant |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| Continuous Drain Current (ID) at Tc | — | 190 A |
| Power Dissipation (PD) at Ta | — | 3.8 W |
| Power Dissipation (PD) at Tc | — | 319 W |
| On-Resistance RDS(on) typical | — | 3.9 mOhm |
| Gate Charge Qg typical | — | 74 nC |
| Maximum Gate-Source Voltage (VGS) | — | 20 V |
| 工作溫度 | — | -55 C to +175 C (junction) |
| Cooling | — | Top-side cooled (case above PCB) |