IQE220N15NM5CGSCATMA1 vs IPTC039N15NM5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQE220N15NM5CGSCATMA1 sa pamamagitan ng Infineon at IPTC039N15NM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQE220N15NM5CGSCATMA1 IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQE220N15NM5CGSCATMA1 IPTC039N15NM5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS 5
FET Type N-Channel —
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current at Ta (ID) 7 A —
Continuous Drain Current at Tc (ID) 44 A —
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 100 W —
On-Resistance (RDS(on)) 22 milliohm (max) —
Gate Threshold Voltage (VGS(th)) 4.6 V —
Packhaging PG-WHTFN-9 (Source-Down) PG-HDSOP-16-2 (top-side cooled)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS 5, Source-Down OptiMOS 5 trench
Hanay ng Temperature na Operasyon -55C to +150C (junction) —
Tindminan RoHS Compliant Compliant
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 21 A
Continuous Drain Current (ID) at Tc — 190 A
Power Dissipation (PD) at Ta — 3.8 W
Power Dissipation (PD) at Tc — 319 W
On-Resistance RDS(on) typical — 3.9 mOhm
Gate Charge Qg typical — 74 nC
Maximum Gate-Source Voltage (VGS) — 20 V
Temperature na Operasyon — -55 C to +175 C (junction)
Cooling — Top-side cooled (case above PCB)

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