IQE220N15NM5CGSCATMA1 vs IPTC039N15NM5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE220N15NM5CGSCATMA1 disebabkan oleh Infineon dan IPTC039N15NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ AktifInfineon
IPTC039N15NM5ATMA1 - 150V 190A OptiMOS 5 N-Channel MOSFET | Infineon
IPTC039N15NM5ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE220N15NM5CGSCATMA1 | IPTC039N15NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current at Ta (ID) | 7 A | — |
| Continuous Drain Current at Tc (ID) | 44 A | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 100 W | — |
| On-Resistance (RDS(on)) | 22 milliohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | — |
| Kemasan | PG-WHTFN-9 (Source-Down) | PG-HDSOP-16-2 (top-side cooled) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | OptiMOS 5 trench |
| Gambaran Suhu Operasi | -55C to +150C (junction) | — |
| Status RoHS | Compliant | Compliant |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| Continuous Drain Current (ID) at Tc | — | 190 A |
| Power Dissipation (PD) at Ta | — | 3.8 W |
| Power Dissipation (PD) at Tc | — | 319 W |
| On-Resistance RDS(on) typical | — | 3.9 mOhm |
| Gate Charge Qg typical | — | 74 nC |
| Maximum Gate-Source Voltage (VGS) | — | 20 V |
| Suhu Operasi | — | -55 C to +175 C (junction) |
| Cooling | — | Top-side cooled (case above PCB) |