IQE220N15NM5CGSCATMA1 vs IPTC054N15NM5ATMA1 Perbandingan

Perbandingan bersamaan detil IQE220N15NM5CGSCATMA1 dari Infineon dan IPTC054N15NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE220N15NM5CGSCATMA1 IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE220N15NM5CGSCATMA1 IPTC054N15NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS 5 (IPT family)
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current at Ta (ID) 7 A —
Continuous Drain Current at Tc (ID) 44 A —
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 100 W —
On-Resistance (RDS(on)) 22 milliohm (max) —
Gate Threshold Voltage (VGS(th)) 4.6 V [DATA_NEEDED: typical VGS(th) value]
Paket PG-WHTFN-9 (Source-Down) PG-HDSOP-16-2 (16-pin top-cooled)
Tipe Mounting Surface Mount Surface Mount (top-side cooled)
Technology OptiMOS 5, Source-Down —
Rentang Suhu Kerja -55C to +150C (junction) —
Status RoHS Compliant Compliant
Continuous Drain Current (ID) at TA=25°C — 17.5 A
Continuous Drain Current (ID) at TC=25°C — 143 A
Power Dissipation (PD) at TA=25°C — 3.8 W
Power Dissipation (PD) at TC=25°C — 250 W
On-Resistance RDS(on) at VGS=10V, ID=50A — 5.4 mΩ
Gate-Source Voltage (VGS) max — 20 V
Total Gate Charge (Qg) typical — 58 nC
Forward Body Diode Voltage (VSD) — 0.83 V
Suhu Hubung Kerja — -55 °C to +175 °C
Lead-Free — Yes
Level MSL — [DATA_NEEDED: MSL rating]

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IQE220N15NM5CGSCATMA1

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