IQE220N15NM5CGSCATMA1 vs IPTC054N15NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE220N15NM5CGSCATMA1 disebabkan oleh Infineon dan IPTC054N15NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE220N15NM5CGSCATMA1 IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE220N15NM5CGSCATMA1 IPTC054N15NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS 5 (IPT family)
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current at Ta (ID) 7 A —
Continuous Drain Current at Tc (ID) 44 A —
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 100 W —
On-Resistance (RDS(on)) 22 milliohm (max) —
Gate Threshold Voltage (VGS(th)) 4.6 V [DATA_NEEDED: typical VGS(th) value]
Kemasan PG-WHTFN-9 (Source-Down) PG-HDSOP-16-2 (16-pin top-cooled)
Jenis Pemasangan Surface Mount Surface Mount (top-side cooled)
Technology OptiMOS 5, Source-Down —
Gambaran Suhu Operasi -55C to +150C (junction) —
Status RoHS Compliant Compliant
Continuous Drain Current (ID) at TA=25°C — 17.5 A
Continuous Drain Current (ID) at TC=25°C — 143 A
Power Dissipation (PD) at TA=25°C — 3.8 W
Power Dissipation (PD) at TC=25°C — 250 W
On-Resistance RDS(on) at VGS=10V, ID=50A — 5.4 mΩ
Gate-Source Voltage (VGS) max — 20 V
Total Gate Charge (Qg) typical — 58 nC
Forward Body Diode Voltage (VSD) — 0.83 V
Suhu Hubungan Operasi — -55 °C to +175 °C
Lead-Free — Yes
Aras MSL — [DATA_NEEDED: MSL rating]

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