IQFH55N04NM6ATMA1 vs IQDH35N03LM5SCATMA1 Perbandingan
Perbandingan bersamaan detil IQFH55N04NM6ATMA1 dari Infineon dan IQDH35N03LM5SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQFH55N04NM6ATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) @ TA=25°C | 53 A | — |
| Pulsed Drain Current @ TC=25°C | 451 A | — |
| Static R_DS(on) (typ) | 0.55 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 214 W | — |
| Paket | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Suhu Hubung Kerja | -55°C to +175°C | — |
| Technology | Trench MOSFET (OptiMOS 6 generation) | OptiMOS 5 (trench, shielded-gate) |
| Status RoHS | Compliant | Compliant |
| AEC-Q100 | [DATA_NEEDED: automotive qualification status] | — |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Level MSL | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |