IQFH55N04NM6ATMA1 vs IQDH35N03LM5SCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQFH55N04NM6ATMA1 disebabkan oleh Infineon dan IQDH35N03LM5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQFH55N04NM6ATMA1 IQDH35N03LM5SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) @ TA=25°C 53 A —
Pulsed Drain Current @ TC=25°C 451 A —
Static R_DS(on) (typ) 0.55 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 214 W —
Kemasan PG-TSON-12-1 (PQFN 8x6 mm², clip-based) PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
Suhu Hubungan Operasi -55°C to +175°C —
Technology Trench MOSFET (OptiMOS 6 generation) OptiMOS 5 (trench, shielded-gate)
Status RoHS Compliant Compliant
AEC-Q100 [DATA_NEEDED: automotive qualification status] —
Drain-Source Voltage (VDS) max — 30 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta — 66 A
Pulsed Drain Current (IDM) at Tc — 700 A
On-State Resistance (RDS(on)) max — 0.35 mOhm @ VGS=10V
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 278 W
Gambaran Suhu Operasi — -55 C to +175 C
Aras MSL — 1 (unlimited)
Marking — IQDH35N03LM5S

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