IR21271STRPBF vs IR21531STRPBF Perbandingan

Perbandingan bersamaan detil IR21271STRPBF dari Infineon dan IR21531STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR21271STRPBF IR21531STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High-Side or Low-Side Half-Bridge
Jumlah Output 1 2 (high-side, low-side)
Input Polarity Non-Inverting —
Supply Voltage (VCC) 9 V to 20 V 10 V to 20 V
High-Side Offset Voltage 600 V max up to 600 V
Peak Source Current 250 mA —
Peak Sink Current 500 mA —
Propagation Delay 200 ns typical —
Waktu naik [DATA_NEEDED: rise time] 80 ns
Waktu Menurun [DATA_NEEDED: fall time] 45 ns
Suhu Kerja -40C to +125C -40C to +125C
Paket 8-SOIC (3.90 mm) 8-pin SOIC (SO-8)
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Yes (Pb-Free, suffix PBF) —
Integrated Current Sense Yes (CS pin + shutdown) —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes (high-side rail) —
Driver Type — High-side and Low-side, self-oscillating
Internal VCC Clamp — 15.6 V
Peak Source/Sink Current — 250 mA
Dead-Time — 0.6 microseconds (typical)
Oscillator — External RC programmable
Bootstrap Diode — Integrated
Input Logic — CMOS Schmitt-trigger (RC timing)
Lead Finish — Pb-free (PBF suffix)
Status RoHS — Compliant (ROHS3)

Spek dan Sumber

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