IR2127STRPBF vs IR21531STRPBF Perbandingan

Perbandingan bersamaan detil IR2127STRPBF dari Infineon dan IR21531STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2127STRPBF IR21531STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High-Side Half-Bridge
Supply Voltage Range 12 V to 20 V —
Output Voltage (Offset) up to 600 V —
Peak Source Current 250 mA —
Peak Sink Current 500 mA —
Propagation Delay 200 ns (typical) —
Input Logic Non-Inverting CMOS Schmitt-trigger (RC timing)
Jumlah Output 1 2 (high-side, low-side)
Waktu naik 80 ns (typical) 80 ns
Waktu Menurun 60 ns (typical) 45 ns
Rentang Suhu Kerja -40C to +125C —
Paket 8-SOIC (3.90 mm body) 8-pin SOIC (SO-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL3 (per JEDEC J-STD-020) —
Lead-Free / RoHS Pb-free (PBF), RoHS compliant —
dV/dt Immunity Yes (high-side floating channel) —
Integrated Current Sense Yes (cycle-by-cycle comparator) —
Driver Type — High-side and Low-side, self-oscillating
Supply Voltage (VCC) — 10 V to 20 V
Internal VCC Clamp — 15.6 V
High-Side Offset Voltage — up to 600 V
Peak Source/Sink Current — 250 mA
Dead-Time — 0.6 microseconds (typical)
Oscillator — External RC programmable
Bootstrap Diode — Integrated
Suhu Kerja — -40C to +125C
Lead Finish — Pb-free (PBF suffix)
Status RoHS — Compliant (ROHS3)

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