IR2127STRPBF vs IR21531STRPBF 比較

詳細並排比較 IR2127STRPBF 由 Infineon 與 IR21531STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IR2127STRPBF IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon

IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon

IR2127STRPBF ✓ 啟用中

規格比較

參數 IR2127STRPBF IR21531STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration High-Side Half-Bridge
Supply Voltage Range 12 V to 20 V —
Output Voltage (Offset) up to 600 V —
Peak Source Current 250 mA —
Peak Sink Current 500 mA —
Propagation Delay 200 ns (typical) —
Input Logic Non-Inverting CMOS Schmitt-trigger (RC timing)
輸出數量 1 2 (high-side, low-side)
上升時間 80 ns (typical) 80 ns
下降時間 60 ns (typical) 45 ns
工作溫度範圍 -40C to +125C —
封裝 8-SOIC (3.90 mm body) 8-pin SOIC (SO-8)
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL3 (per JEDEC J-STD-020) —
Lead-Free / RoHS Pb-free (PBF), RoHS compliant —
dV/dt Immunity Yes (high-side floating channel) —
Integrated Current Sense Yes (cycle-by-cycle comparator) —
Driver Type — High-side and Low-side, self-oscillating
Supply Voltage (VCC) — 10 V to 20 V
Internal VCC Clamp — 15.6 V
High-Side Offset Voltage — up to 600 V
Peak Source/Sink Current — 250 mA
Dead-Time — 0.6 microseconds (typical)
Oscillator — External RC programmable
Bootstrap Diode — Integrated
工作溫度 — -40C to +125C
Lead Finish — Pb-free (PBF suffix)
RoHS 狀態 — Compliant (ROHS3)

資料表與資源

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