IR2153STRPBF vs IRS2153DSTRPBF Perbandingan

Perbandingan bersamaan detil IR2153STRPBF dari Infineon dan IRS2153DSTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2153STRPBF IRS2153DSTRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge —
Jumlah Output 2 (High Side / Low Side) —
Offset Voltage (Max) 600 V —
Supply Voltage (VCC) 10 V to 15.6 V (zener clamped) —
Bootstrap Supply Voltage (VB) VCC + 10 V to VCC + 15.6 V (clamped) —
Source/Sink Current (Peak) 200 mA / 400 mA —
Output Current 0.4 A —
Propagation Delay 1.2 us —
Rise / Fall Time [DATA_NEEDED: rise/fall time] —
Oscillator Type Self-oscillating RC RC-based, similar to CMOS 555 timer
Deadtime Control Programmable via CT, tighter initial control —
UVLO Hysteresis 1 V —
Shutdown Feature 1/6 VCC threshold on CT pin —
Suhu Kerja -40C to +125C —
Paket 8-SOIC (3.90 mm width) 8-pin SOIC
Tipe Mounting Surface Mount Surface Mount
Lead Free / RoHS Yes (PBF suffix) —
Level MSL 1 —
Topologi — Half-Bridge Gate Driver with internal oscillator
High-Side Floating Supply Absolute Max — 600 V
VDD Supply Voltage Range — 10 V to 20 V
Output Source Current (typ.) — 0.18 A
Output Sink Current (typ.) — 0.26 A
Internal Propagation Delay (typ.) — 1.1 us
Integrated Bootstrap FET — Yes
Programmable Shutdown Pin — Yes
Rentang Suhu Kerja — -40C to +125C
Technology — HVIC + latch-immune CMOS
Status RoHS — Compliant
Lead-Free — Yes

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