IR2153STRPBF vs IRS2153DSTRPBF 比較

詳細並排比較 IR2153STRPBF 由 Infineon 與 IRS2153DSTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IR2153STRPBF IRS2153DSTRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration Half-Bridge —
輸出數量 2 (High Side / Low Side) —
Offset Voltage (Max) 600 V —
Supply Voltage (VCC) 10 V to 15.6 V (zener clamped) —
Bootstrap Supply Voltage (VB) VCC + 10 V to VCC + 15.6 V (clamped) —
Source/Sink Current (Peak) 200 mA / 400 mA —
Output Current 0.4 A —
Propagation Delay 1.2 us —
Rise / Fall Time [DATA_NEEDED: rise/fall time] —
Oscillator Type Self-oscillating RC RC-based, similar to CMOS 555 timer
Deadtime Control Programmable via CT, tighter initial control —
UVLO Hysteresis 1 V —
Shutdown Feature 1/6 VCC threshold on CT pin —
工作溫度 -40C to +125C —
封裝 8-SOIC (3.90 mm width) 8-pin SOIC
安裝類型 Surface Mount Surface Mount
Lead Free / RoHS Yes (PBF suffix) —
MSL 等級 1 —
拓撲 — Half-Bridge Gate Driver with internal oscillator
High-Side Floating Supply Absolute Max — 600 V
VDD Supply Voltage Range — 10 V to 20 V
Output Source Current (typ.) — 0.18 A
Output Sink Current (typ.) — 0.26 A
Internal Propagation Delay (typ.) — 1.1 us
Integrated Bootstrap FET — Yes
Programmable Shutdown Pin — Yes
工作溫度範圍 — -40C to +125C
Technology — HVIC + latch-immune CMOS
RoHS 狀態 — Compliant
Lead-Free — Yes

資料表與資源

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