IRF1010ESTRLPBF vs STB60NF06T4 Perbandingan

Perbandingan bersamaan detil IRF1010ESTRLPBF dari Infineon dan STB60NF06T4 dari STMicroelectronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRF1010ESTRLPBF IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRF1010ESTRLPBF STB60NF06T4
Merek Infineon STMicroelectronics
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0,80
FET Type N-Channel —
Technology HEXFET planar —
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) @ Tc 84 A —
Power Dissipation (Pd) @ Tc 200 W —
On-Resistance (RDS on) @ VGS=10V 12 mOhm —
Total Gate Charge (Qg) 86.6 nC —
Operating Mode Enhancement —
Drive Voltage 10 V (standard level) —
Tipe Mounting Surface Mount Surface Mount
Paket D2PAK (TO-263) D2PAK (TO-263)
Qualification JEDEC standard qualified —
Structure Planar cell (wide SOA) —
Avalanche Testing 100% avalanche energy tested —
Sourcing Multi-vendor, broad distribution availability —
Pb-Free / RoHS PBF (Pb-free) suffix —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at 25°C — 60 A
Continuous Drain Current (ID) at 100°C — 42 A
Pulsed Drain Current (IDM) — 240 A
On-Resistance (RDS(on)) at VGS=10V — 14 mΩ (typ), 18 mΩ (max)
Gate-Source Voltage (VGS) — ±20 V
Gate Charge (Qg) — 60 nC (typ)
Input Capacitance (Ciss) — 2200 pF (typ)
Output Capacitance (Coss) — 350 pF (typ)
Reverse Transfer Capacitance (Crss) — 120 pF (typ)
Avalanche Energy (EAS) — 300 mJ
Rentang Suhu Kerja — -55°C to +175°C
Status RoHS — Compliant
Bebas Halogen — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon