IRF1407PBF vs IRFB4110PBF Perbandingan

Perbandingan bersamaan detil IRF1407PBF dari Infineon dan IRFB4110PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF1407PBF IRFB4110PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $1,55
FET Type N-Channel —
Technology HEXFET (stripe-planar MOSFET) HEXFET (planar DMOS)
Drain-Source Voltage (VDS) 75 V 100 V
Continuous Drain Current (ID) at TC=25C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C 330 W —
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] —
Gate Charge (Qg) 160 nC (typical) —
Maximum Junction Temperature 175 C —
Rentang Suhu Kerja -55 C to +175 C —
Paket TO-220AB (through-hole, 3 leads) TO-220AB (through-hole)
Tipe Mounting Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) —
Avalanche Rating Repetitive avalanche rated —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
Suhu Hubung Kerja — -55 °C to +175 °C
Status RoHS — Compliant (Pb-free suffix)
Lead-Free — Yes (PBF suffix denotes Pb-free)

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