IRF1407PBF vs IRFB4110PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF1407PBF sa pamamagitan ng Infineon at IRFB4110PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF1407PBF IRFB4110PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock — In Stock
Presyo ng Yunit (USD) — $1.55
FET Type N-Channel —
Technology HEXFET (stripe-planar MOSFET) HEXFET (planar DMOS)
Drain-Source Voltage (VDS) 75 V 100 V
Continuous Drain Current (ID) at TC=25C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C 330 W —
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] —
Gate Charge (Qg) 160 nC (typical) —
Maximum Junction Temperature 175 C —
Hanay ng Temperature na Operasyon -55 C to +175 C —
Packhaging TO-220AB (through-hole, 3 leads) TO-220AB (through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) —
Avalanche Rating Repetitive avalanche rated —
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
Temperature ng Junction na Operasyon — -55 °C to +175 °C
Tindminan RoHS — Compliant (Pb-free suffix)
Lead-Free — Yes (PBF suffix denotes Pb-free)

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