IRF1407PBF vs IRFB4110PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF1407PBF disebabkan oleh Infineon dan IRFB4110PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF1407PBF | IRFB4110PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $1.55 |
| FET Type | N-Channel | — |
| Technology | HEXFET (stripe-planar MOSFET) | HEXFET (planar DMOS) |
| Drain-Source Voltage (VDS) | 75 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 130 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25C | 330 W | — |
| On-Resistance RDS(on) at VGS=10V | 7.8 mOhm (typical) | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS threshold typical/min/max] | — |
| Gate Charge (Qg) | 160 nC (typical) | — |
| Maximum Junction Temperature | 175 C | — |
| Gambaran Suhu Operasi | -55 C to +175 C | — |
| Kemasan | TO-220AB (through-hole, 3 leads) | TO-220AB (through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Lead-Free / RoHS | Lead-free, RoHS compliant (PBF suffix) | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Status RoHS | — | Compliant (Pb-free suffix) |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |