IRF150P220AKMA1 vs IRFB4110PBF Perbandingan

Perbandingan bersamaan detil IRF150P220AKMA1 dari Infineon dan IRFB4110PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF150P220AKMA1 IRFB4110PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $1,55
Manufacturer Infineon Technologies —
Part Number IRF150P220AKMA1 —
Technology StrongIRFET HEXFET (planar DMOS)
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS max) 150 V —
Continuous Drain Current (ID) at Tc=25C 203 A —
On-Resistance (RDS(on) max) at VGS=10V 2.7 mOhm —
Gate-Source Voltage (VGS max) [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typ] —
Power Dissipation (Pd) at Tc=25C 556 W —
Power Dissipation (Pd) at Ta=25C 3.8 W —
Rentang Suhu Kerja -55C to +175C —
Paket TO-247-3 (PG-TO247-3) TO-220AB (through-hole)
Tipe Mounting Through Hole Through Hole
Terminal Finish Tin (Sn) —
JESD-609 Code e3 —
Status RoHS Compliant Compliant (Pb-free suffix)
Lead-Free Yes Yes (PBF suffix denotes Pb-free)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
Suhu Hubung Kerja — -55 °C to +175 °C

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