IRF150P220AKMA1 vs IRFB4110PBF 比較

詳細並排比較 IRF150P220AKMA1 由 Infineon 與 IRFB4110PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF150P220AKMA1 IRFB4110PBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
庫存狀態 — In Stock
單價 (USD) — $1.55
Manufacturer Infineon Technologies —
Part Number IRF150P220AKMA1 —
Technology StrongIRFET HEXFET (planar DMOS)
電晶體類型 N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS max) 150 V —
Continuous Drain Current (ID) at Tc=25C 203 A —
On-Resistance (RDS(on) max) at VGS=10V 2.7 mOhm —
Gate-Source Voltage (VGS max) [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typ] —
Power Dissipation (Pd) at Tc=25C 556 W —
Power Dissipation (Pd) at Ta=25C 3.8 W —
工作溫度範圍 -55C to +175C —
封裝 TO-247-3 (PG-TO247-3) TO-220AB (through-hole)
安裝類型 Through Hole Through Hole
Terminal Finish Tin (Sn) —
JESD-609 Code e3 —
RoHS 狀態 Compliant Compliant (Pb-free suffix)
Lead-Free Yes Yes (PBF suffix denotes Pb-free)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
工作接面溫度 — -55 °C to +175 °C

資料表與資源

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