IRF150P220AKMA1 vs IRFB4110PBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF150P220AKMA1 sa pamamagitan ng Infineon at IRFB4110PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRF150P220AKMA1 - 150V 203A StrongIRFET Power MOSFET | Infineon
IRF150P220AKMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IRF150P220AKMA1 | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $1.55 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRF150P220AKMA1 | — |
| Technology | StrongIRFET | HEXFET (planar DMOS) |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS max) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 203 A | — |
| On-Resistance (RDS(on) max) at VGS=10V | 2.7 mOhm | — |
| Gate-Source Voltage (VGS max) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (Pd) at Tc=25C | 556 W | — |
| Power Dissipation (Pd) at Ta=25C | 3.8 W | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | — |
| Packhaging | TO-247-3 (PG-TO247-3) | TO-220AB (through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Terminal Finish | Tin (Sn) | — |
| JESD-609 Code | e3 | — |
| Tindminan RoHS | Compliant | Compliant (Pb-free suffix) |
| Lead-Free | Yes | Yes (PBF suffix denotes Pb-free) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |