IRF4905PBF vs IRLU024NPBF Perbandingan
Perbandingan bersamaan detil IRF4905PBF dari Infineon dan IRLU024NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF4905PBF | IRLU024NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | N-Channel, Logic-Level |
| Technology | HEXFET (IR MOSFET) | HEXFET Power MOSFET (5th generation) |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC | -74 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at TC | 200 W | — |
| On-Resistance RDS(on) max at VGS=-10V | 20 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Total Gate Charge (Qg) | 120 nC | 10 nC (typical, per listing) |
| Rentang Suhu Kerja | -55 °C to +175 °C (junction) | — |
| Paket | TO-220AB (through-hole) | IPAK (TO-251AA), Through Hole |
| Pin Configuration | Gate - Drain - Source (left to right) | — |
| Tipe Mounting | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | Yes (PBF suffix indicates lead-free plating) |
| Level MSL | 1 (not moisture-sensitive for TO-220) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLU024NPBF |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 65 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Power Dissipation (PD) at TC=25C | — | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 110 C/W (50 C/W PCB-mounted) |
| Suhu Hubung Kerja | — | -55C to +175C |
| Qualification | — | JEDEC standard |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |