IRF4905PBF vs IRLU024NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF4905PBF sa pamamagitan ng Infineon at IRLU024NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF4905PBF | IRLU024NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | P-Channel | N-Channel, Logic-Level |
| Technology | HEXFET (IR MOSFET) | HEXFET Power MOSFET (5th generation) |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC | -74 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at TC | 200 W | — |
| On-Resistance RDS(on) max at VGS=-10V | 20 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Total Gate Charge (Qg) | 120 nC | 10 nC (typical, per listing) |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (junction) | — |
| Packhaging | TO-220AB (through-hole) | IPAK (TO-251AA), Through Hole |
| Pin Configuration | Gate - Drain - Source (left to right) | — |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | Yes (PBF suffix indicates lead-free plating) |
| Level ng MSL | 1 (not moisture-sensitive for TO-220) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLU024NPBF |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 65 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Power Dissipation (PD) at TC=25C | — | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 110 C/W (50 C/W PCB-mounted) |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Qualification | — | JEDEC standard |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |