IRF4905STRLPBF vs IRF4905SPBF Perbandingan
Perbandingan bersamaan detil IRF4905STRLPBF dari Infineon dan IRF4905SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF4905STRLPBF | IRF4905SPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -74 A | — |
| Pulsed Drain Current (IDM) | -260 A | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max, typical +/-20V] |
| On-Resistance RDS(on) at VGS=-10V | 20 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | 120 nC (typical per Mouser listing) |
| Power Dissipation (PD) at Tc=25C | 170 W | — |
| Rentang Suhu Kerja | -55C to +175C | — |
| Paket | D2PAK (TO-263) | D2PAK (TO-263) surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (Planar) | HEXFET, planar cell |
| Level MSL | 1 | — |
| Status RoHS | Compliant | Compliant (PBF suffix indicates Pb-free) |
| Lead-Free | Yes | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | -42 A |
| On-Resistance (RDS(on) max) | — | 20 mOhm @ VGS = -10V |
| Gate Threshold Voltage (VGS(th)) | — | -2.0 V to -4.0 V |
| Power Dissipation (PD, Tc=25C) | — | 170 W |
| Suhu Hubung Kerja | — | -55 C to +150 C |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC, typical 0.6 C/W] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Qualification | — | JEDEC standard |