IRF4905STRLPBF vs IRF4905SPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF4905STRLPBF sa pamamagitan ng Infineon at IRF4905SPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRF4905STRLPBF - 55V P-Channel HEXFET MOSFET, 74A, D2PAK | Infineon
IRF4905STRLPBF ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRF4905STRLPBF | IRF4905SPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -74 A | — |
| Pulsed Drain Current (IDM) | -260 A | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max, typical +/-20V] |
| On-Resistance RDS(on) at VGS=-10V | 20 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | 120 nC (typical per Mouser listing) |
| Power Dissipation (PD) at Tc=25C | 170 W | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | — |
| Packhaging | D2PAK (TO-263) | D2PAK (TO-263) surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | HEXFET (Planar) | HEXFET, planar cell |
| Level ng MSL | 1 | — |
| Tindminan RoHS | Compliant | Compliant (PBF suffix indicates Pb-free) |
| Lead-Free | Yes | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | -42 A |
| On-Resistance (RDS(on) max) | — | 20 mOhm @ VGS = -10V |
| Gate Threshold Voltage (VGS(th)) | — | -2.0 V to -4.0 V |
| Power Dissipation (PD, Tc=25C) | — | 170 W |
| Temperature ng Junction na Operasyon | — | -55 C to +150 C |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC, typical 0.6 C/W] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Qualification | — | JEDEC standard |