IRF7309TRPBF vs IRFR9024NTRPBF Perbandingan

Perbandingan bersamaan detil IRF7309TRPBF dari Infineon dan IRFR9024NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7309TRPBF IRFR9024NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0,17
Configuration Dual N-Channel + P-Channel (Complementary) —
Polarity N+P P-Channel
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (N-channel, TA=25C) 4 A —
Continuous Drain Current (P-channel, TA=25C) 3 A —
On-Resistance (N-channel, max) 50 mOhm —
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] —
Power Dissipation (TA=25C) 1.4 W —
Technology IR HEXFET Generation V HEXFET (Gen 5)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Rentang Suhu Kerja -55C to +150C (TJ) —
Paket 8-SO (SOIC-8) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL-1 (unlimited floor life per JEDEC J-STD-020) —
Lead-Free Status Yes (TRPBF suffix = Pb-free) —
Status RoHS Compliant Compliant
Packaging Tape & Reel —
VDS (Drain-Source Voltage) — -55 V
Continuous Drain Current (Tc=25C) — -11 A
Arus Kedip Pengecor — [DATA_NEEDED: pulsed drain current]
VGS (Gate-Source Voltage) — ±20 V
VGS(th) (Threshold Voltage) — [DATA_NEEDED: VGS(th) typical]
RDS(on) Max at VGS=-10V — 175 mOhm
Total Gate Charge (Qg) — 12.7 nC
Maximum Power Dissipation (Tc=25C) — 38 W
Suhu Hubung Kerja — -55C to +175C
Jumlah Pin — 3

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