IRF7309TRPBF vs IRFR9024NTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7309TRPBF disebabkan oleh Infineon dan IRFR9024NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7309TRPBF IRFR9024NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0.17
Configuration Dual N-Channel + P-Channel (Complementary) —
Polarity N+P P-Channel
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (N-channel, TA=25C) 4 A —
Continuous Drain Current (P-channel, TA=25C) 3 A —
On-Resistance (N-channel, max) 50 mOhm —
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] —
Power Dissipation (TA=25C) 1.4 W —
Technology IR HEXFET Generation V HEXFET (Gen 5)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Gambaran Suhu Operasi -55C to +150C (TJ) —
Kemasan 8-SO (SOIC-8) TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL-1 (unlimited floor life per JEDEC J-STD-020) —
Lead-Free Status Yes (TRPBF suffix = Pb-free) —
Status RoHS Compliant Compliant
Packaging Tape & Reel —
VDS (Drain-Source Voltage) — -55 V
Continuous Drain Current (Tc=25C) — -11 A
Arus Alir Gesa — [DATA_NEEDED: pulsed drain current]
VGS (Gate-Source Voltage) — ±20 V
VGS(th) (Threshold Voltage) — [DATA_NEEDED: VGS(th) typical]
RDS(on) Max at VGS=-10V — 175 mOhm
Total Gate Charge (Qg) — 12.7 nC
Maximum Power Dissipation (Tc=25C) — 38 W
Suhu Hubungan Operasi — -55C to +175C
Kiraan Pin — 3

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