IRF7342PBF vs IRF7313TRPBF Perbandingan

Perbandingan bersamaan detil IRF7342PBF dari Infineon dan IRF7313TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7342PBF IRF7313TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon (formerly International Rectifier)
Part Number IRF7342PBF IRF7313TRPBF
Original Mfr International Rectifier (now Infineon) —
Technology HEXFET (Gen V) - P-Channel MOSFET Array IR MOSFET Generation V (HEXFET Fifth Generation)
Configuration Dual P-Channel (2 independent MOSFETs) —
Drain-Source Voltage V(DSS) -55 V —
Continuous Drain Current I(D) 3.4 A —
On-Resistance R(DS(on)) 0.105 ohm —
Power Dissipation P(D) 2 W —
Tipe Mounting Surface Mount Surface Mount
Paket / Case 8-SOIC (SO-8) —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] -55C to +150C (junction)
Gate Threshold Vgs(th) [DATA_NEEDED: Vgs(th)] —
Switching Frequency Optimization < 100 kHz —
Status RoHS Compliant —
Halogen Status Halogen-Free —
Qualification JEDEC standard —
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
Paket — 8-pin SOIC (SO-8) surface mount
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
Level MSL — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

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