IRF7342PBF vs IRF7313TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7342PBF sa pamamagitan ng Infineon at IRF7313TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7342PBF IRF7313TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon (formerly International Rectifier)
Part Number IRF7342PBF IRF7313TRPBF
Original Mfr International Rectifier (now Infineon) —
Technology HEXFET (Gen V) - P-Channel MOSFET Array IR MOSFET Generation V (HEXFET Fifth Generation)
Configuration Dual P-Channel (2 independent MOSFETs) —
Drain-Source Voltage V(DSS) -55 V —
Continuous Drain Current I(D) 3.4 A —
On-Resistance R(DS(on)) 0.105 ohm —
Power Dissipation P(D) 2 W —
Uri ng Pagpapasok Surface Mount Surface Mount
Packhaging / Kaso 8-SOIC (SO-8) —
Hanay ng Temperature na Operasyon [DATA_NEEDED: operating temperature range] -55C to +150C (junction)
Gate Threshold Vgs(th) [DATA_NEEDED: Vgs(th)] —
Switching Frequency Optimization < 100 kHz —
Tindminan RoHS Compliant —
Halogen Status Halogen-Free —
Qualification JEDEC standard —
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
Packhaging — 8-pin SOIC (SO-8) surface mount
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
Level ng MSL — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

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