IRF7342PBF vs IRF7343TRPBF Perbandingan

Perbandingan bersamaan detil IRF7342PBF dari Infineon dan IRF7343TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7342PBF IRF7343TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRF7342PBF —
Original Mfr International Rectifier (now Infineon) —
Technology HEXFET (Gen V) - P-Channel MOSFET Array IR MOSFET (HEXFET Generation V)
Configuration Dual P-Channel (2 independent MOSFETs) —
Drain-Source Voltage V(DSS) -55 V —
Continuous Drain Current I(D) 3.4 A —
On-Resistance R(DS(on)) 0.105 ohm —
Power Dissipation P(D) 2 W —
Tipe Mounting Surface Mount Surface Mount
Paket / Case 8-SOIC (SO-8) —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] —
Gate Threshold Vgs(th) [DATA_NEEDED: Vgs(th)] —
Switching Frequency Optimization < 100 kHz —
Status RoHS Compliant —
Halogen Status Halogen-Free —
Qualification JEDEC standard —
Part Status — Active
Tipe Transistor — N and P-Channel Complementary MOSFET Array
Drain-to-Source Voltage (VDS) - N-Channel — 55 V
Drain-to-Source Voltage (VDS) - P-Channel — 55 V
Continuous Drain Current (ID) - N-Channel — 4.7 A
Continuous Drain Current (ID) - P-Channel — 3.4 A
On-Resistance (RDS(on)) - N-Channel — 0.043 ohm (typical per chipdig.com)
On-Resistance (RDS(on)) max — 50 mOhm
Power Dissipation (PD) — 2 W
Paket — 8-SOIC (SO-8)
Lead-Free — Yes
RoHS Compliance — Compliant

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