IRF7342PBF vs IRF7343TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7342PBF disebabkan oleh Infineon dan IRF7343TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7342PBF IRF7343TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRF7342PBF —
Original Mfr International Rectifier (now Infineon) —
Technology HEXFET (Gen V) - P-Channel MOSFET Array IR MOSFET (HEXFET Generation V)
Configuration Dual P-Channel (2 independent MOSFETs) —
Drain-Source Voltage V(DSS) -55 V —
Continuous Drain Current I(D) 3.4 A —
On-Resistance R(DS(on)) 0.105 ohm —
Power Dissipation P(D) 2 W —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan / Case 8-SOIC (SO-8) —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] —
Gate Threshold Vgs(th) [DATA_NEEDED: Vgs(th)] —
Switching Frequency Optimization < 100 kHz —
Status RoHS Compliant —
Halogen Status Halogen-Free —
Qualification JEDEC standard —
Part Status — Active
Jenis Transistor — N and P-Channel Complementary MOSFET Array
Drain-to-Source Voltage (VDS) - N-Channel — 55 V
Drain-to-Source Voltage (VDS) - P-Channel — 55 V
Continuous Drain Current (ID) - N-Channel — 4.7 A
Continuous Drain Current (ID) - P-Channel — 3.4 A
On-Resistance (RDS(on)) - N-Channel — 0.043 ohm (typical per chipdig.com)
On-Resistance (RDS(on)) max — 50 mOhm
Power Dissipation (PD) — 2 W
Kemasan — 8-SOIC (SO-8)
Lead-Free — Yes
RoHS Compliance — Compliant

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga