IRF7342PBF vs IRF7343TRPBF 比較

詳細並排比較 IRF7342PBF 由 Infineon 與 IRF7343TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRF7343TRPBF IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF ✓ 啟用中

規格比較

參數 IRF7342PBF IRF7343TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRF7342PBF —
Original Mfr International Rectifier (now Infineon) —
Technology HEXFET (Gen V) - P-Channel MOSFET Array IR MOSFET (HEXFET Generation V)
Configuration Dual P-Channel (2 independent MOSFETs) —
Drain-Source Voltage V(DSS) -55 V —
Continuous Drain Current I(D) 3.4 A —
On-Resistance R(DS(on)) 0.105 ohm —
Power Dissipation P(D) 2 W —
安裝類型 Surface Mount Surface Mount
封裝 / 外殼 8-SOIC (SO-8) —
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
Gate Threshold Vgs(th) [DATA_NEEDED: Vgs(th)] —
Switching Frequency Optimization < 100 kHz —
RoHS 狀態 Compliant —
Halogen Status Halogen-Free —
Qualification JEDEC standard —
Part Status — Active
電晶體類型 — N and P-Channel Complementary MOSFET Array
Drain-to-Source Voltage (VDS) - N-Channel — 55 V
Drain-to-Source Voltage (VDS) - P-Channel — 55 V
Continuous Drain Current (ID) - N-Channel — 4.7 A
Continuous Drain Current (ID) - P-Channel — 3.4 A
On-Resistance (RDS(on)) - N-Channel — 0.043 ohm (typical per chipdig.com)
On-Resistance (RDS(on)) max — 50 mOhm
Power Dissipation (PD) — 2 W
封裝 — 8-SOIC (SO-8)
Lead-Free — Yes
RoHS Compliance — Compliant

資料表與資源

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