IRF7380TRPBF vs IRF7341GTRPBF Perbandingan
Perbandingan bersamaan detil IRF7380TRPBF dari Infineon dan IRF7341GTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7380TRPBF | IRF7341GTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7380TRPBF | — |
| Configuration | Dual N-Channel MOSFET Array (2 independent FETs in one package) | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 3.6 A | 5.1 A |
| On-Resistance RDS(on) max | 73 mOhm at VGS = 10 V | — |
| Technology | IR MOSFET™ (Infineon HEXFET-style planar N-ch) | IR HEXFET Planar MOSFET |
| Total Power Dissipation (PD) | 2 W | — |
| Paket | SO-8 (8-SO, SOIC-8) | 8-SO (SOIC-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55 C to +150 C | — |
| Gate Drive Voltage (typical) | 10 V (full RDS(on)); logic-level not guaranteed | — |
| Lead-Free / RoHS | Yes (Pb-free plating, suffix PBF) | — |
| Packaging | Tape & Reel (suffix TR) | — |
| Primary Application | High-frequency DC-DC converters | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| On-Resistance (RDS(on)) max | — | 50 mOhm at VGS=10V |
| Power Dissipation (PD) | — | 2.4 W |
| Maximum Junction Temperature | — | 175 C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |