IRF7380TRPBF vs IRF7341GTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7380TRPBF disebabkan oleh Infineon dan IRF7341GTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7380TRPBF | IRF7341GTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7380TRPBF | — |
| Configuration | Dual N-Channel MOSFET Array (2 independent FETs in one package) | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 3.6 A | 5.1 A |
| On-Resistance RDS(on) max | 73 mOhm at VGS = 10 V | — |
| Technology | IR MOSFET™ (Infineon HEXFET-style planar N-ch) | IR HEXFET Planar MOSFET |
| Total Power Dissipation (PD) | 2 W | — |
| Kemasan | SO-8 (8-SO, SOIC-8) | 8-SO (SOIC-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55 C to +150 C | — |
| Gate Drive Voltage (typical) | 10 V (full RDS(on)); logic-level not guaranteed | — |
| Lead-Free / RoHS | Yes (Pb-free plating, suffix PBF) | — |
| Packaging | Tape & Reel (suffix TR) | — |
| Primary Application | High-frequency DC-DC converters | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| On-Resistance (RDS(on)) max | — | 50 mOhm at VGS=10V |
| Power Dissipation (PD) | — | 2.4 W |
| Maximum Junction Temperature | — | 175 C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |