IRF9540NSTRLPBF vs IRF4905STRLPBF Perbandingan
Perbandingan bersamaan detil IRF9540NSTRLPBF dari Infineon dan IRF4905STRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF9540NSTRLPBF | IRF4905STRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Product Type | Single P-Channel Power MOSFET (HEXFET) | — |
| Drain-Source Voltage (Vdss) | -100 V | — |
| Continuous Drain Current (Id) | -23 A (at Tc) | — |
| On-Resistance (Rds(on)) | 117 mOhm max | — |
| Total Gate Charge (Qg) | 64.7 nC | 120 nC |
| Power Dissipation (Ta) | 3.1 W | — |
| Power Dissipation (Tc) | 110 W | — |
| Paket | D2PAK (TO-263), surface mount | D2PAK (TO-263) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET, Advanced Process | HEXFET (Planar) |
| Polarity | P-Channel | — |
| Operating Mode | Enhancement-mode | — |
| Avalanche Rated | Yes | — |
| Lead Finish | Pb-free, RoHS-compliant | — |
| Shipping Media | Tape and Reel (TR suffix) | — |
| FET Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc=25C | — | -74 A |
| Pulsed Drain Current (IDM) | — | -260 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) at VGS=-10V | — | 20 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 170 W |
| Rentang Suhu Kerja | — | -55C to +175C |
| Level MSL | — | 1 |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |