IRF9540NSTRLPBF vs IRF4905STRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF9540NSTRLPBF sa pamamagitan ng Infineon at IRF4905STRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF9540NSTRLPBF IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon

IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon

IRF9540NSTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF9540NSTRLPBF IRF4905STRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon (formerly International Rectifier) —
Product Type Single P-Channel Power MOSFET (HEXFET) —
Drain-Source Voltage (Vdss) -100 V —
Continuous Drain Current (Id) -23 A (at Tc) —
On-Resistance (Rds(on)) 117 mOhm max —
Total Gate Charge (Qg) 64.7 nC 120 nC
Power Dissipation (Ta) 3.1 W —
Power Dissipation (Tc) 110 W —
Packhaging D2PAK (TO-263), surface mount D2PAK (TO-263)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET, Advanced Process HEXFET (Planar)
Polarity P-Channel —
Operating Mode Enhancement-mode —
Avalanche Rated Yes —
Lead Finish Pb-free, RoHS-compliant —
Shipping Media Tape and Reel (TR suffix) —
FET Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -74 A
Pulsed Drain Current (IDM) — -260 A
Gate-Source Voltage (VGS) max — ±20 V
On-Resistance RDS(on) at VGS=-10V — 20 mOhm
Power Dissipation (PD) at Tc=25C — 170 W
Hanay ng Temperature na Operasyon — -55C to +175C
Level ng MSL — 1
Tindminan RoHS — Compliant
Lead-Free — Yes

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