IRFH5301TRPBF vs IRF7854TRPBF Perbandingan
Perbandingan bersamaan detil IRFH5301TRPBF dari Infineon dan IRF7854TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFH5301TRPBF | IRF7854TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $0,48 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (StrongIRFET) | HEXFET (planar N-channel) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (TA, 25C) | 35 A | — |
| Continuous Drain Current (TC, 25C) | 100 A | — |
| RDS(on) Max @ VGS=10V | 1.85 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | 37 nC (typical) | — |
| Power Dissipation (TA) | 3.6 W | — |
| Power Dissipation (TC) | 110 W | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55°C to +150°C (TJ) |
| Paket | PQFN (5x6 mm) Single Die | SO-8 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Drive Logic Level | Optimized for 5 V VGS drive | — |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free | — |
| Qualification | JEDEC standard | JEDEC industrial, Normal level |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | — | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |