IRFH5301TRPBF vs IRFH5300TRPBF Perbandingan
Perbandingan bersamaan detil IRFH5301TRPBF dari Infineon dan IRFH5300TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFH5301TRPBF | IRFH5300TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET (StrongIRFET) | HEXFET (StrongIRFET) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (TA, 25C) | 35 A | — |
| Continuous Drain Current (TC, 25C) | 100 A | — |
| RDS(on) Max @ VGS=10V | 1.85 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | 37 nC (typical) | 50 nC |
| Power Dissipation (TA) | 3.6 W | — |
| Power Dissipation (TC) | 110 W | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55C to +150C |
| Paket | PQFN (5x6 mm) Single Die | PQFN-8 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Drive Logic Level | Optimized for 5 V VGS drive | — |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free | — |
| Qualification | JEDEC standard | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 40 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | 336 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Power Dissition at TA=25C | — | 3.6 W |
| Power Dissipation at TC=25C | — | 250 W |
| Gate Drive Level | — | Logic-level (5V optimized) |
| JEDEC Qualification | — | Yes |
| Status RoHS | — | Compliant |