IRFH5301TRPBF vs IRFH5300TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFH5301TRPBF sa pamamagitan ng Infineon at IRFH5300TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFH5300TRPBF IRFH5300TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRFH5300TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRFH5300TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFH5301TRPBF IRFH5300TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology HEXFET (StrongIRFET) HEXFET (StrongIRFET)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (TA, 25C) 35 A —
Continuous Drain Current (TC, 25C) 100 A —
RDS(on) Max @ VGS=10V 1.85 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) 37 nC (typical) 50 nC
Power Dissipation (TA) 3.6 W —
Power Dissipation (TC) 110 W —
Hanay ng Temperature na Operasyon -55C to +150C (junction) -55C to +150C
Packhaging PQFN (5x6 mm) Single Die PQFN-8 (5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Gate Drive Logic Level Optimized for 5 V VGS drive —
RoHS / Halogen-Free RoHS compliant, Halogen-free —
Qualification JEDEC standard —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 40 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — 336 A
On-Resistance RDS(on) max at VGS=10V — 1.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — +/-20 V
Power Dissition at TA=25C — 3.6 W
Power Dissipation at TC=25C — 250 W
Gate Drive Level — Logic-level (5V optimized)
JEDEC Qualification — Yes
Tindminan RoHS — Compliant

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