IRFH5301TRPBF vs IRFH5300TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH5301TRPBF disebabkan oleh Infineon dan IRFH5300TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFH5301TRPBF | IRFH5300TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET (StrongIRFET) | HEXFET (StrongIRFET) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (TA, 25C) | 35 A | — |
| Continuous Drain Current (TC, 25C) | 100 A | — |
| RDS(on) Max @ VGS=10V | 1.85 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | 37 nC (typical) | 50 nC |
| Power Dissipation (TA) | 3.6 W | — |
| Power Dissipation (TC) | 110 W | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | -55C to +150C |
| Kemasan | PQFN (5x6 mm) Single Die | PQFN-8 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gate Drive Logic Level | Optimized for 5 V VGS drive | — |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free | — |
| Qualification | JEDEC standard | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 40 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | 336 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Power Dissition at TA=25C | — | 3.6 W |
| Power Dissipation at TC=25C | — | 250 W |
| Gate Drive Level | — | Logic-level (5V optimized) |
| JEDEC Qualification | — | Yes |
| Status RoHS | — | Compliant |