IRFL024ZTRPBF vs IRLL2705TRPBF Perbandingan
Perbandingan bersamaan detil IRFL024ZTRPBF dari Infineon dan IRLL2705TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFL024ZTRPBF | IRLL2705TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET fifth generation) |
| Drain-Source Voltage (Vds) | 55 V | — |
| Continuous Drain Current (Id) at Ta=25C | 5.1 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Rds(on) Max at Vgs=10V | 57.5 mOhm | — |
| Gate Charge (Qg) Typ | 9.1 nC | — |
| Gate-Source Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Power Dissipation (Pd) at Ta=25C | 1 W | — |
| Rentang Suhu Kerja | -55C to +150C | -55 deg C to +175 deg C |
| Paket | SOT-223 | SOT-223 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (+ drain tab) | — |
| Level MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes (PBF suffix) |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25 deg C | — | 3.8 A |
| Peak Drain Current (IDM, pulsed) | — | 5.2 A |
| RDS(on) max at VGS=10V | — | 40 mOhm |
| Total Gate Charge (Qg) | — | 32 nC |
| Gate Drive Level | — | Logic-Level |
| Power Dissipation at TA=25 deg C | — | 1 W (Ta), 2.1 W (per LCSC listing) |
| Dynamic dv/dt Rating | — | Yes |