IRFL024ZTRPBF vs IRLL2705TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFL024ZTRPBF disebabkan oleh Infineon dan IRLL2705TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFL024ZTRPBF | IRLL2705TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET fifth generation) |
| Drain-Source Voltage (Vds) | 55 V | — |
| Continuous Drain Current (Id) at Ta=25C | 5.1 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Rds(on) Max at Vgs=10V | 57.5 mOhm | — |
| Gate Charge (Qg) Typ | 9.1 nC | — |
| Gate-Source Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Power Dissipation (Pd) at Ta=25C | 1 W | — |
| Gambaran Suhu Operasi | -55C to +150C | -55 deg C to +175 deg C |
| Kemasan | SOT-223 | SOT-223 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (+ drain tab) | — |
| Aras MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes (PBF suffix) |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25 deg C | — | 3.8 A |
| Peak Drain Current (IDM, pulsed) | — | 5.2 A |
| RDS(on) max at VGS=10V | — | 40 mOhm |
| Total Gate Charge (Qg) | — | 32 nC |
| Gate Drive Level | — | Logic-Level |
| Power Dissipation at TA=25 deg C | — | 1 W (Ta), 2.1 W (per LCSC listing) |
| Dynamic dv/dt Rating | — | Yes |