IRFR3710ZTRLPBF vs IRFR024NTRPBF Perbandingan

Perbandingan bersamaan detil IRFR3710ZTRLPBF dari Infineon dan IRFR024NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR3710ZTRLPBF IRFR024NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide), HEXFET —
Drain to Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) @ 25C (Tc) 42 A —
Max Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=10V 18 mOhm —
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs(th) typ) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) 69 nC —
Power Dissipation (Pd) @ Tc=25C 140 W —
Avalanche Energy Rating (EAS) 150 mJ —
Maximum Junction Temperature 175 C —
Paket TO-252AA (DPAK), 3-pin (2+tab) TO-252-3 (DPAK, SC-63), surface mount
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Lisleapex listing) —
Configuration Single with built-in diode —
Suhu Kerja -55 C to +175 C (TJ) —
Status RoHS Compliant (Pb-free PBF suffix) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Series — HEXFET Power MOSFET (5th generation)
Tipe Transistor — N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 17 A (at TC = 25 C)
Pulsed Drain Current (IDM) — 60 A
On-Resistance (RDS(on)) — 75 mOhm max (at VGS = 10 V)
Gate-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Typical Gate Charge (Qg) — 13.3 nC
Total Power Dissipation (PD) — 45 W (at TC = 25 C)
Suhu Hubung Kerja — -55 C to +175 C
Packaging — Tape and Reel (TR)
RoHS Compliance — Compliant (Pb-free / PbF terminations)
Level MSL — 1 (per JEDEC J-STD-020)

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