IRFR3710ZTRLPBF vs IRFR024NTRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR3710ZTRLPBF sa pamamagitan ng Infineon at IRFR024NTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR3710ZTRLPBF | IRFR024NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), HEXFET | — |
| Drain to Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) @ 25C (Tc) | 42 A | — |
| Max Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=10V | 18 mOhm | — |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max rating] | — |
| Gate Threshold Voltage (Vgs(th) typ) | [DATA_NEEDED: Vgs(th)] | — |
| Total Gate Charge (Qg) | 69 nC | — |
| Power Dissipation (Pd) @ Tc=25C | 140 W | — |
| Avalanche Energy Rating (EAS) | 150 mJ | — |
| Maximum Junction Temperature | 175 C | — |
| Packhaging | TO-252AA (DPAK), 3-pin (2+tab) | TO-252-3 (DPAK, SC-63), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Lisleapex listing) | — |
| Configuration | Single with built-in diode | — |
| Temperature na Operasyon | -55 C to +175 C (TJ) | — |
| Tindminan RoHS | Compliant (Pb-free PBF suffix) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Series | — | HEXFET Power MOSFET (5th generation) |
| Uri ng Transistor | — | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 17 A (at TC = 25 C) |
| Pulsed Drain Current (IDM) | — | 60 A |
| On-Resistance (RDS(on)) | — | 75 mOhm max (at VGS = 10 V) |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Typical Gate Charge (Qg) | — | 13.3 nC |
| Total Power Dissipation (PD) | — | 45 W (at TC = 25 C) |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Packaging | — | Tape and Reel (TR) |
| RoHS Compliance | — | Compliant (Pb-free / PbF terminations) |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |